The electrical conductivity of a semiconductor increases when electromagnetic radiation of wavelength shorter than $2480 \; nm$ is incident on it. The band gap in $eV$ for the semiconductor is

  • A
    $0.9$
  • B
    $0.7$
  • C
    $0.5$
  • D
    $1.1$

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Similar Questions

The given graph represents $V-I$ characteristic for a semiconductor device. Which of the following statements is correct?

$A$ photodiode is a device

$A$ light emitting diode $(LED)$ is fabricated using $GaAs$ semiconducting material whose band gap is $1.42 \,eV$. The wavelength of light emitted from the $LED$ is: (in $\,nm$)

$A$ $p-n$ photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly:

Assertion: $A$ $P-N$ junction diode is used in reverse bias to detect the intensity of light.
Reason: In reverse bias condition,current is small but it is more sensitive to changes in intensity of incident light.

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