The given graph represents $V-I$ characteristic for a semiconductor device. Which of the following statements is correct?
- AIt is the $V-I$ characteristic for a solar cell where point $A$ represents open circuit voltage and point $B$ represents short circuit current.
- BIt is for a solar cell and points $A$ and $B$ represent open circuit voltage and current,respectively.
- CIt is for a photodiode and points $A$ and $B$ represent open circuit voltage and current,respectively.
- DIt is for an $LED$ and points $A$ and $B$ represent open circuit voltage and short circuit current,respectively.
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Similar Questions
Which type of semiconductor device does not need any bias voltage?
Assertion: $A$ $P-N$ junction diode is used in reverse bias to detect the intensity of light.
Reason: In reverse bias condition,current is small but it is more sensitive to changes in intensity of incident light.
Reason: In reverse bias condition,current is small but it is more sensitive to changes in intensity of incident light.
Easy
View SolutionThe $V-I$ characteristics of an $LED$ are correctly shown by which graph?
Given below are two statements: one is labelled as Assertion $A$ and the other is labelled as Reason $R$.
Assertion $A$: Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason $R$: The current in the forward bias is more than the current in the reverse bias for a $p-n$ junction diode.
In the light of the above statements,choose the correct answer from the options given below:
Assertion $A$: Photodiodes are preferably operated in reverse bias condition for light intensity measurement.
Reason $R$: The current in the forward bias is more than the current in the reverse bias for a $p-n$ junction diode.
In the light of the above statements,choose the correct answer from the options given below:
Consider the following statements $:$
$A.$ The junction area of a solar cell is made very large compared to a photodiode.
$B.$ Solar cells are not connected with any external bias.
$C.$ $\text{LED}$ is made of heavily doped $p-n$ junction.
$D.$ Increase of forward current results in continuous increase of $\text{LED}$ light intensity up to a saturation point.
$E.$ $\text{LED}$ must be connected in forward bias for the emission of light.
Which of the following statements are correct?
$A.$ The junction area of a solar cell is made very large compared to a photodiode.
$B.$ Solar cells are not connected with any external bias.
$C.$ $\text{LED}$ is made of heavily doped $p-n$ junction.
$D.$ Increase of forward current results in continuous increase of $\text{LED}$ light intensity up to a saturation point.
$E.$ $\text{LED}$ must be connected in forward bias for the emission of light.
Which of the following statements are correct?
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