Assertion: $A$ $P-N$ junction diode is used in reverse bias to detect the intensity of light.
Reason: In reverse bias condition,current is small but it is more sensitive to changes in intensity of incident light.

  • A
    Both Assertion & Reason are True & the Reason is a correct explanation of the Assertion.
  • B
    Both Assertion & Reason are True but Reason is not a correct explanation of the Assertion.
  • C
    Assertion is True but the Reason is False.
  • D
    Both Assertion & Reason are False.

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Similar Questions

The schematic symbol of a light emitting diode $(LED)$ is:

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For an $LED$ to emit light in the visible region of the electromagnetic spectrum,it can have an energy band gap in the range of (Planck's constant,$h = 6.6 \times 10^{-34} \ J s$ and speed of light,$c = 3 \times 10^8 \ m s^{-1}$ in vacuum).

Consider a situation in which reverse biased current of a particular $P-N$ junction increases when it is exposed to light of wavelength $\lambda \le 621 \, nm$. During this process,enhancement in carrier concentration takes place due to the generation of hole-electron pairs. The value of the band gap is nearly (in $eV$):

The energy band gap of a semiconducting material required to produce a violet (wavelength $= 4000 \, \mathring{A}$) $LED$ is $....... \, \text{eV}$. (Round off to the nearest integer).

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