$A$ light emitting diode $(LED)$ is fabricated using $GaAs$ semiconducting material whose band gap is $1.42 \,eV$. The wavelength of light emitted from the $LED$ is: (in $\,nm$)

$(i)$ Name the type of diode whose characteristics are shown in figure $(a)$ and figure $(b)$.
$(ii)$ What does the point $P$ in figure $(a)$ represent?
$(iii)$ What do the points $P$ and $Q$ in figure $(b)$ represent?

Which of the following statements is true about LEDs?

When an $LED$ is manufactured by using aluminium gallium arsenide $(AlGaAs)$,it emits:

$A$ $p-n$ junction photodiode is fabricated from a semiconductor with a band gap of $2.5 eV$. It can detect a signal of wavelength: (Given: Planck's constant $h = 6.6 \times 10^{-34} Js$,speed of light $c = 3 \times 10^8 m/s$,elementary charge $e = 1.6 \times 10^{-19} C$)

With increasing biasing voltage of a photodiode,the magnitude of photoelectric current