$A$ $p-n$ photodiode is made of a material with a band gap of $2.0\, eV$. The minimum frequency of the radiation that can be absorbed by the material is nearly:

  • A
    $1 \times 10^{14}\, Hz$
  • B
    $20 \times 10^{14}\, Hz$
  • C
    $10 \times 10^{14}\, Hz$
  • D
    $5 \times 10^{14}\, Hz$

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In an $LED$,when forward bias is increased (starting from zero),the intensity of emitted light will:

Which one of the following symbols represents a photodiode?

Identify the correct circuit diagrams for the normal operation from the following.

Which one of the following statements is $WRONG$ regarding $LED$?

Consider the following statements $:$
$A.$ The junction area of a solar cell is made very large compared to a photodiode.
$B.$ Solar cells are not connected with any external bias.
$C.$ $\text{LED}$ is made of heavily doped $p-n$ junction.
$D.$ Increase of forward current results in continuous increase of $\text{LED}$ light intensity up to a saturation point.
$E.$ $\text{LED}$ must be connected in forward bias for the emission of light.
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