The dominant mechanism for the motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are:

In the following circuit,the reading in the ammeter is (in $mA$)

In the depletion layer of a reverse-biased $p-n$ junction,the

Current $I$ through a given $p-n$ junction when a voltage $V$ is applied across it is given by $I = I_0 \left( e^{\frac{V}{2 V_T}} - 1 \right)$,where $I_0$ and $V_T$ are constants. If $r_d(I)$ is the dynamic resistance of the junction,then $r_d(1000 I_0) = \alpha r_d(10 I_0)$,where $\alpha$ is approximately equal to

The voltage $V_0$ in the network shown is

In a $P-N$ junction,when the current value increases,the contact potential ..........