Current $I$ through a given $p-n$ junction when a voltage $V$ is applied across it is given by $I = I_0 \left( e^{\frac{V}{2 V_T}} - 1 \right)$,where $I_0$ and $V_T$ are constants. If $r_d(I)$ is the dynamic resistance of the junction,then $r_d(1000 I_0) = \alpha r_d(10 I_0)$,where $\alpha$ is approximately equal to

The depletion layer consists of .......

If a $p-n$ junction is forward biased,then which of the following figures gives the correct direction of current inside the semiconductor?

In a $p-n$ junction diode, the current $I$ can be expressed as $I=I_{0} \left[\exp \left(\frac{e V}{k_{B} T}\right)-1\right]$, where $I_{0}$ is the reverse saturation current, $V$ is the voltage across the diode (positive for forward bias, negative for reverse bias), $I$ is the current through the diode, $k_{B}$ is the Boltzmann constant $(8.6 \times 10^{-5} \; eV/K)$, and $T$ is the absolute temperature. If for a given diode $I_{0}=5 \times 10^{-12} \; A$ and $T=300 \; K$, then:
$(a)$ What will be the forward current at a forward voltage of $0.6 \; V$?
$(b)$ What will be the increase in the current if the voltage across the diode is increased to $0.7 \; V$?
$(c)$ What is the dynamic resistance?
$(d)$ What will be the current if reverse bias voltage changes from $1 \; V$ to $2 \; V$?

In order to forward bias a $PN$ junction,the negative terminal of the battery is connected to

When a $P-N$ junction is reverse biased,then ...