In the case of a p-n junction diode,the width | vedclass

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(B) In a $p-n$ junction diode,when it is reverse biased,the applied voltage supports the barrier potential,which causes the width of the depletion reg

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Increased by reverse biasing

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(B) In a $p-n$ junction diode,when it is reverse biased,the applied voltage supports the barrier potential,which causes the width of the depletion region to increase. In forward biasing,the width of the depletion region decreases because the forward voltage opposes the potential barrier. Additionally,the width of the depletion region decreases with heavy doping because the increased concentration of charge carriers leads to a narrower space charge region.

In the case of a $p-n$ junction diode,the width of the depletion region is:

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