The width of the depletion layer of a p-n jun | vedclass

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(D) $(i)$ When a $p-n$ junction is forward biased,the external electric field opposes the internal electric field of the depletion region. This reduce

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decreases and increases.

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(D) $(i)$ When a $p-n$ junction is forward biased,the external electric field opposes the internal electric field of the depletion region. This reduces the potential barrier and consequently decreases the width of the depletion layer.$(ii)$ When a $p-n$ junction is reverse biased,the external electric field supports the internal electric field of the depletion region. This increases the potential barrier and consequently increases the width of the depletion layer.

The width of the depletion layer of a $p-n$ junction diode,when it is $(i)$ forward biased and $(ii)$ reverse biased,respectively,is:

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