In a $P-N$ junction diode,if the $P$ region is more heavily doped than the $n$ region,then the depletion layer is:

In the given circuit, the voltage across load resistance $(R_L)$ is: (in $V$)

$A$ $P-N$ junction is formed using $Si$ material. What is the approximate height of the depletion barrier in $V$?

For diode $D_1$,the forward bias resistance is $20 \ \Omega$ and the reverse bias resistance is $600 \ \Omega$. For diode $D_2$,the forward bias resistance is $30 \ \Omega$ and the reverse bias resistance is $200 \ \Omega$. Find the equivalent resistance between $A$ and $B$ if $(i)$ $A$ is at a higher potential,and $(ii)$ $B$ is at a higher potential.

In the following circuit,the equivalent resistance between $A$ and $B$ is

In the circuit shown,if the forward voltage drop for the diode is $0.5\, V$,the current in the circuit will be.....$mA$.