A P-N junction is formed using Si material. W | vedclass

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(C) The potential barrier (or depletion barrier) for a $P-N$ junction depends on the semiconductor material used.For Silicon $(Si)$,the energy gap is

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$0.7$

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(C) The potential barrier (or depletion barrier) for a $P-N$ junction depends on the semiconductor material used.For Silicon $(Si)$,the energy gap is approximately $1.1 \ eV$,and the potential barrier height is typically around $0.7 \ V$ at room temperature.For Germanium $(Ge)$,the potential barrier height is typically around $0.3 \ V$.Therefore,for a $Si$ $P-N$ junction,the correct value is $0.7 \ V$.

$A$ $P-N$ junction is formed using $Si$ material. What is the approximate height of the depletion barrier in $V$?

Similar Questions

The current $I$ in the circuit shown below is: (All diodes are ideal and identical)

$A$ $p-n$ junction diode is connected to a battery of emf $5.7 \ V$ in series with a resistor of $5 \ k\Omega$ such that it is forward biased. If the barrier potential of the diode is $0.7 \ V$,neglecting the diode resistance,the current in the circuit is:

If the forward voltage in a diode is increased,the width of the depletion region $\qquad$ .

Which one of the following statements is not correct?

In the given figure,which of the diodes are forward biased?

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