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(A) In an $N$-type semiconductor,pentavalent impurity atoms are added to a pure semiconductor (like $Si$ or $Ge$).These impurity atoms provide extra e

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The donor level lies closely below the bottom of the conduction band.

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(A) In an $N$-type semiconductor,pentavalent impurity atoms are added to a pure semiconductor (like $Si$ or $Ge$).These impurity atoms provide extra electrons to the conduction band.The energy levels of these donor electrons are called donor energy levels $(E_d)$.These donor energy levels are located just below the conduction band $(E_c)$,typically at a distance of about $0.01 \ eV$ for $Ge$ and $0.05 \ eV$ for $Si$.Therefore,the donor level lies closely below the bottom of the conduction band.

Which of the following statements is true for an $N$-type semiconductor?

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