When a semiconductor is doped with donor impurity,

$A$ potential difference of $2.5 \,V$ is applied across the faces of a germanium crystal plate. The face area of the crystal is $1 \,cm^2$ and its thickness is $1.0 \,mm$. The free electron concentration in germanium is $2 \times 10^{19} \,m^{-3}$ and the electron and hole mobilities are $0.33 \,m^2/V \cdot s$ and $0.17 \,m^2/V \cdot s$ respectively. The current across the plate will be .......... $A$.

The valence of an impurity added to germanium crystal in order to convert it into a $P-$type semiconductor is

In a $p-$type semiconductor,which of the following statements is true?

In a $p$-type semiconductor,the acceptor level is at $50 \text{ meV}$ above the valence band. To produce one hole,the maximum wavelength of the light photon required is (Planck's constant,$h = 6.6 \times 10^{-34} \text{ Js}$ and speed of light in vacuum,$c = 3 \times 10^8 \text{ m/s}$) (in $\mu \text{m}$)

Which of the following energy band diagrams shows the $N-$ type semiconductor?