Which of the following statements is not true?
- AThe resistance of an intrinsic semiconductor decreases with an increase in temperature.
- BDoping pure $Si$ with trivalent impurities gives $p$-type semiconductor.
- CThe majority carriers in $n$-type semiconductors are holes.
- D$A$ $p-n$ junction can act as a semiconductor diode.
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Similar Questions
Which of the following statements is not true?
For a pure $Si$ crystal at $300 \ K$,the electron $(n_e)$ and hole $(n_h)$ concentrations are equal,being $1.5 \times 10^{16} \ m^{-3}$. On doping with Indium,the hole concentration increases to $4.5 \times 10^{22} \ m^{-3}$. Calculate the new electron concentration $(n_e)$ in the doped $Si$.
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View SolutionWhich of the following statements is true for an $N$-type semiconductor?
Easy
View SolutionIn a $P$-type semiconductor, the acceptor level is $57 \, meV$ above the valence band. What is the wavelength of light in $\mathring{A}$ required to create a hole? (Given: $h = 6.6 \times 10^{-34} \, J \cdot s$, $c = 3 \times 10^8 \, m/s$, $1 \, eV = 1.6 \times 10^{-19} \, J$)
Difficult
View SolutionPure silicon at $300 \ K$ has equal electron and hole concentration of $1.5 \times 10^{16} \ m^{-3}$. If the hole concentration increases to $3 \times 10^{22} \ m^{-3}$,then the electron concentration in the silicon is
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