Which of the following statements is correct | vedclass

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(D) In an $n$-type semiconductor,donor impurities are added to the intrinsic semiconductor. These impurities create discrete energy levels known as do

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The donor energy level lies just below the bottom of the conduction band.

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(D) In an $n$-type semiconductor,donor impurities are added to the intrinsic semiconductor. These impurities create discrete energy levels known as donor energy levels. These levels are located within the forbidden energy gap,very close to the bottom of the conduction band. This proximity allows electrons from the donor level to be easily excited into the conduction band at room temperature,thereby increasing the conductivity of the material.

Which of the following statements is correct for an $n$-type semiconductor?

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