The rate of recombination or generation of charge carriers in a semiconductor is governed by the law$(s)$ of:

In an $n$-type semiconductor,the Fermi energy level lies

In a semiconductor,the number density of intrinsic charge carriers at $27^{\circ} \text{C}$ is $1.5 \times 10^{16} \, \text{m}^{-3}$. If the semiconductor is doped with impurity atoms,the hole density increases to $4.5 \times 10^{22} \, \text{m}^{-3}$. The electron density in the doped semiconductor is $..... \times 10^{9} \, \text{m}^{-3}$.

Minority carriers in a $p$-type semiconductor are

When germanium is doped with phosphorus,the doped material has

When the temperature of a semiconductor increases,then: