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(D) The width of the depletion zone $(W)$ in a $PN$ junction is given by $W = \sqrt{\frac{2\epsilon V_{bi}}{q} \left( \frac{N_A + N_D}{N_A N_D} \right

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Both $(b)$ and $(c)$.

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(D) The width of the depletion zone $(W)$ in a $PN$ junction is given by $W = \sqrt{\frac{2\epsilon V_{bi}}{q} \left( \frac{N_A + N_D}{N_A N_D} \right)}$,where $N_A$ and $N_D$ are the acceptor and donor dopant densities. Thus,the width depends on the dopant densities.The depletion region consists of fixed ionized dopant atoms (negative ions on the $P$-side and positive ions on the $N$-side). These fixed charges create an internal electric field that opposes further diffusion of charge carriers.Therefore,both statements $(b)$ and $(c)$ are correct.

Which of the following statements concerning the depletion zone of an unbiased $PN$ junction is (are) true?

Similar Questions

Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.

To make a $PN$ junction conducting,what condition must be met?

$A$ waveform is applied to the following circuit. Assuming an ideal diode and ${R_1} = {R_2}$, which of the following output waveforms will be produced?

The electrical resistance of the depletion layer is large because

Ohm's law fails in

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