The electrical resistance of the depletion layer is large because

Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is......$A$

When forward bias is applied to a $p-n$ junction,then what happens to the potential barrier $(V_B)$ and the width $(X)$ of the depletion region?

In a $P-N$ junction,avalanche current flows in the circuit when the biasing is:

$A$ $5 \, V$ battery is connected across the points $X$ and $Y$. Assume $D_{1}$ and $D_{2}$ to be normal silicon diodes. Find the current (in $A$) supplied by the battery if the positive terminal of the battery is connected to point $X$.

The given circuit has two ideal diodes $D_1$ and $D_2$ connected as shown in the figure. The current flowing through the resistance $R_1$ will be (in $\,A$)