When a reverse bias is applied to a p-n junct | vedclass

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(D) When a $p-n$ junction diode is reverse biased,the positive terminal of the battery is connected to the $n$-region and the negative terminal to the

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It raises the potential barrier.

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(D) When a $p-n$ junction diode is reverse biased,the positive terminal of the battery is connected to the $n$-region and the negative terminal to the $p$-region.This configuration pulls the majority charge carriers (electrons in the $n$-region and holes in the $p$-region) away from the junction.As a result,the width of the depletion layer increases.Because the depletion layer width increases,the potential barrier height also increases,making it more difficult for majority charge carriers to cross the junction.

When a reverse bias is applied to a $p-n$ junction diode,what happens to the potential barrier?

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