Two ideal diodes are connected to a battery as shown in the circuit. The current supplied by the battery is......$A$

Find the magnitude of current in the given circuit. (in $A$)

The $I-V$ characteristic of a $p-n$ junction diode is shown in the figure. Find the approximate dynamic resistance of the $p-n$ junction when a forward bias of $1 \text{ V}$ is applied. (in $Omega$)

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are

In the following circuit,$PN$-junction diodes $D_1$,$D_2$,and $D_3$ are ideal. For the following potentials of $A$ and $B$,the correct increasing order of equivalent resistance between $A$ and $B$ will be:
$(i) V_A = -10 V, V_B = -5 V$
$(ii) V_A = -5 V, V_B = -10 V$
$(iii) V_A = -4 V, V_B = -12 V$

Current $I$ through a given $p-n$ junction when a voltage $V$ is applied across it is given by $I = I_0 \left( e^{\frac{V}{2 V_T}} - 1 \right)$,where $I_0$ and $V_T$ are constants. If $r_d(I)$ is the dynamic resistance of the junction,then $r_d(1000 I_0) = \alpha r_d(10 I_0)$,where $\alpha$ is approximately equal to