The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are

The characteristic curve of an ideal $p-n$ junction diode is:

If the voltage across the diode in the given circuit is $0.5 \ V$,then the current flowing through the circuit is ...... $mA$.

$Ge$ and $Si$ diodes start conducting at $0.3\,V$ and $0.7\,V$ respectively. In the following figure,if the $Ge$ diode connection is reversed,the value of $V_0$ changes by: ...... $V$ (assume that the $Ge$ diode has a large breakdown voltage).

Which diode is in forward bias?

For diode $D_1$,the forward bias resistance is $20 \ \Omega$ and the reverse bias resistance is $600 \ \Omega$. For diode $D_2$,the forward bias resistance is $30 \ \Omega$ and the reverse bias resistance is $200 \ \Omega$. Find the equivalent resistance between $A$ and $B$ if $(i)$ $A$ is at a higher potential,and $(ii)$ $B$ is at a higher potential.