The $I-V$ characteristic of a $p-n$ junction diode is shown in the figure. Find the approximate dynamic resistance of the $p-n$ junction when a forward bias of $1 \text{ V}$ is applied. (in $Omega$)

The current-voltage relation of a diode is given by $I = (e^{1000V/T} - 1) \; mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \; V$ while measuring the voltage to obtain a current of $5 \; mA$ at $300 \; K$,what will be the error in the value of the current in $mA$?

In a forward biased $p-n$ junction diode,the potential barrier in the depletion region will be of the form:

What will be the current flowing in the circuit?

$A$ semiconductor $(Ge - As)$ has an energy gap of $1.43\, eV.$ What is the maximum wavelength emitted when a hole and an electron recombine in such semiconductor in $\mathring{A}$?

For the circuit shown in the figure,the equivalent resistance between points $A$ and $B$ for two cases $(i)$ $V_A > V_B$ and (ii) $V_B > V_A$ is $\qquad \Omega$ and $\qquad \Omega$ respectively. ($D_1$ and $D_2$ are ideal diodes)