The increase in the width of the depletion re | vedclass

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(C) In a $p-n$ junction diode,when a reverse bias is applied,the positive terminal of the external battery is connected to the $n$-region and the nega

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reverse bias only

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(C) In a $p-n$ junction diode,when a reverse bias is applied,the positive terminal of the external battery is connected to the $n$-region and the negative terminal to the $p$-region.This causes the majority charge carriers (electrons in the $n$-region and holes in the $p$-region) to be pulled away from the junction.As a result,the number of uncovered immobile ions near the junction increases,which leads to an increase in the width of the depletion region.

The increase in the width of the depletion region in a $p-n$ junction diode is due to

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