The $V-I$ characteristic of a diode is shown in the figure. The ratio of forward to reverse bias resistance is

  • A
    $10$
  • B
    $10^{-6}$
  • C
    $10^6$
  • D
    $100$

Explore More

Similar Questions

$A$ semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z=33)$. $A$ second semiconductor $Y$ is made by doping germanium with indium $(Z=49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

The breakdown in a reverse biased $p-n$ junction diode is more likely to occur due to

Determine $V_{CE}$ in the following silicon-based transistor circuit. (in $V$)

In a $p-n$ junction diode,the direction of diffusion current is from

Find the current $i$ in the circuit.

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo