In which of the following statements is the obtained impure semiconductor of $p$-type?

For a pure $Si$ crystal at $300 \ K$,the electron $(n_e)$ and hole $(n_h)$ concentrations are equal,being $1.5 \times 10^{16} \ m^{-3}$. On doping with Indium,the hole concentration increases to $4.5 \times 10^{22} \ m^{-3}$. Calculate the new electron concentration $(n_e)$ in the doped $Si$.

$A$ semiconductor is doped with phosphorous atoms as an impurity. The impurity levels created in the semiconductor are close to the

Which type of impurity is to be added to a pure semiconductor to get a $p$-type semiconductor?

In an extrinsic semiconductor,the number densities of holes and electrons are ${N_p}$ and ${N_e}$ respectively. Then:

Which of the following statements is not true?