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Two ideal diodes are connected in the network as shown in the figure. The equivalent resistance between $A$ and $B$ is $.......\Omega$.

$A$ $P-N$ junction is formed using $Si$ material. What is the approximate height of the depletion barrier in $V$?

In the given circuit,the current flowing through the ideal $P-N$ junction diode is .......$mA$.

The reverse biasing in a $PN$ junction diode

Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. The built-in potential in each diode is $0.7\; V$. For the input voltages shown in the figure,the voltage (in $Volts$) at point $A$ is

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