Both the diodes used in the circuit shown are assumed to be ideal and have negligible resistance when these are forward biased. The built-in potential in each diode is $0.7\; V$. For the input voltages shown in the figure,the voltage (in $Volts$) at point $A$ is

Write the formula and definition of dynamic resistance and also state their approximate values for forward bias and reverse bias.

The current-voltage relation of a diode is given by $I = \left( {{e^{\frac{{1000V}}{T}}} - 1} \right) \, mA$,where the applied voltage $V$ is in volts and the temperature $T$ is in Kelvin. If a student makes an error of $\pm 0.01 \, V$ while measuring the voltage to obtain a current of $5 \, mA$ at $300 \, K$,then the error in the value of the current in $mA$ is.....$mA$

The reverse breakdown voltage for a silicon diode is $6 \ V$ for a particular doping concentration and the forward bias voltage drop is $0.3 \ V$. Find the approximate current through the battery in the given circuit in $Amp$.

Current $I$ through a given $p-n$ junction when a voltage $V$ is applied across it is given by $I = I_0 \left( e^{\frac{V}{2 V_T}} - 1 \right)$,where $I_0$ and $V_T$ are constants. If $r_d(I)$ is the dynamic resistance of the junction,then $r_d(1000 I_0) = \alpha r_d(10 I_0)$,where $\alpha$ is approximately equal to

In the following figure,the diodes which are forward biased are: