If the potential barrier across a $p-n$ junction is $0.6\,V$,then the electric field intensity in the depletion region having a width of $6 \times 10^{-6}\,m$ will be $......\times 10^{5}\,N/C$.

The resistance of a reverse biased $P-N$ junction diode is about

In a $p-n$ junction diode, the current $I$ can be expressed as $I=I_{0} \left[\exp \left(\frac{e V}{k_{B} T}\right)-1\right]$, where $I_{0}$ is the reverse saturation current, $V$ is the voltage across the diode (positive for forward bias, negative for reverse bias), $I$ is the current through the diode, $k_{B}$ is the Boltzmann constant $(8.6 \times 10^{-5} \; eV/K)$, and $T$ is the absolute temperature. If for a given diode $I_{0}=5 \times 10^{-12} \; A$ and $T=300 \; K$, then:
$(a)$ What will be the forward current at a forward voltage of $0.6 \; V$?
$(b)$ What will be the increase in the current if the voltage across the diode is increased to $0.7 \; V$?
$(c)$ What is the dynamic resistance?
$(d)$ What will be the current if reverse bias voltage changes from $1 \; V$ to $2 \; V$?

$A$ semiconductor $X$ is made by doping a germanium crystal with arsenic $(Z=33)$. $A$ second semiconductor $Y$ is made by doping germanium with indium $(Z=49)$. The two are joined end to end and connected to a battery as shown. Which of the following statements is correct?

In the circuit shown in the figure,the non-zero potential difference across diode $D_{1}$ and that across diode $D_{2}$ are equal. Are the diodes identical in characteristics? Explain.

The given circuit has two ideal diodes $D_1$ and $D_2$ connected as shown in the figure. The current flowing through the resistance $R_1$ will be (in $\,A$)