The resistance of a reverse biased $P-N$ junction diode is about

The depletion layer in the $P-N$ junction region is caused by

An electron in the $n$-region of a $p-n$ junction moves towards the junction with a speed of $5 \times 10^5 \ m/s$. If the barrier potential of the junction is $0.45 \ V$,then the speed with which the electron enters the $p$-region after penetration through the barrier is (Charge of the electron $e = 1.6 \times 10^{-19} \ C$ and mass of the electron $m = 9 \times 10^{-31} \ kg$).

In the case of forward biasing of a $p-n$ junction diode,which one of the following figures correctly depicts the direction of conventional current (indicated by an arrow mark)?

Application of a forward bias to a $P-N$ junction

In the given figure,each diode has a forward bias resistance of $30\, \Omega$ and infinite resistance in reverse bias. The current ${I}_{1}$ will be $....\,A$.