If $N_A$ is the number density of acceptor atoms added and $N_D$ is the number density of donor atoms added to a semiconductor,and $n_e$ and $n_h$ are the number density of electrons and holes in it,then:

The charge carriers in a $p$-type semiconductor are

$A$ crystal of intrinsic silicon at room temperature has a carrier concentration of $1.6 \times 10^{16} / m^3$. If the donor concentration level is $4.8 \times 10^{20} / m^3$,then the concentration of holes in the semiconductor is

The addition of antimony atoms to a sample of intrinsic germanium transforms it into a material which is:

In the energy band diagram of a material shown below,the open circles and filled circles denote holes and electrons respectively. The material is a/an

In pure $Si$ at $300 \ K$,the concentration of electrons $(n_e)$ and holes $(n_h)$ is equal and is $1.5 \times 10^{16} \ m^{-3}$. If the concentration of holes $(n_h)$ increases to $3 \times 10^{22} \ m^{-3}$ after doping with Indium,calculate the concentration of electrons $(n_e)$ in the doped $Si$.