In pure Si at 300 K,the concentration of ele | vedclass

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(B) For a semiconductor in thermal equilibrium,the law of mass action states that $n_e n_h = n_i^2$,where $n_i$ is the intrinsic carrier concentration

Vedclass · Accepted Answer

$7.5 	imes 10^9 \ m^{-3}$

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(B) For a semiconductor in thermal equilibrium,the law of mass action states that $n_e n_h = n_i^2$,where $n_i$ is the intrinsic carrier concentration.Given,$n_i = 1.5 	imes 10^{16} \ m^{-3}$ and the new hole concentration $n_h = 3 	imes 10^{22} \ m^{-3}$.Substituting these values into the formula:$n_e = \frac{n_i^2}{n_h}$$n_e = \frac{(1.5 	imes 10^{16})^2}{3 	imes 10^{22}}$$n_e = \frac{2.25 	imes 10^{32}}{3 	imes 10^{22}}$$n_e = 0.75 	imes 10^{10} \ m^{-3} = 7.5 	imes 10^9 \ m^{-3}$.

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