For a $p-n$ junction,the intensity of the electric field is $1 \times 10^{6} \text{ V/m}$ and the width of the depletion region is $5000 \text{ Å}$. The value of the potential barrier is $\dots \text{ V}$.

The forbidden energy gap of $Ge$ is $0.75 \ eV$. The maximum wavelength of incident photon radiation that can generate an electron-hole pair in a $Ge$ semiconductor is ........... $\mathring{A}$.

In the following circuit,the equivalent resistance between $A$ and $B$ is

In the given circuit,the voltage across the $P-N$ junction diode remains constant at $0.5 \ V$ regardless of the current. The maximum power rating of the diode is $100 \ mW$. What should be the value of $R$ in $\Omega$ to obtain the maximum current in the circuit?

The following table provides the set of values of $V$ and $I$ obtained for a given diode. Let the characteristics be nearly linear. Over this range,the forward and reverse bias resistance of the given diode respectively are:

Condition	$V$	$I$
Forward biasing	$2.0 \, V$	$60 \, mA$
Forward biasing	$2.4 \, V$	$80 \, mA$
Reverse biasing	$0 \, V$	$0 \, \mu A$
Reverse biasing	$-2 \, V$	$-0.25 \, \mu A$

State the methods of connection of $p-n$ junction.