The forbidden energy gap of $Ge$ is $0.75 \ eV$. The maximum wavelength of incident photon radiation that can generate an electron-hole pair in a $Ge$ semiconductor is ........... $\mathring{A}$.

For an ideal diode,in forward and reverse biased condition the resistance is respectively

The width of the depletion layer of a $p-n$ junction diode,when it is $(i)$ forward biased and $(ii)$ reverse biased,respectively,is:

The circuit shown in the figure contains two diodes,each with a forward resistance of $30 \, \Omega$ and infinite backward resistance. If the battery is $3 \, V$,the current through the $50 \, \Omega$ resistance (in ampere) is

What is a depletion layer? What is the order of its thickness?

All the diodes are ideal. The current flowing in the $2\,\Omega$ resistor connected between the diodes $D_1$ and $D_2$ is: (in $,A$)