In the given circuit,the voltage across the $P-N$ junction diode remains constant at $0.5 \ V$ regardless of the current. The maximum power rating of the diode is $100 \ mW$. What should be the value of $R$ in $\Omega$ to obtain the maximum current in the circuit?

Identify the solar cell characteristics from the following options.

What is breakdown voltage and saturation current?

In a $p-n$ junction diode, the current $I$ can be expressed as $I=I_{0} \left[\exp \left(\frac{e V}{k_{B} T}\right)-1\right]$, where $I_{0}$ is the reverse saturation current, $V$ is the voltage across the diode (positive for forward bias, negative for reverse bias), $I$ is the current through the diode, $k_{B}$ is the Boltzmann constant $(8.6 \times 10^{-5} \; eV/K)$, and $T$ is the absolute temperature. If for a given diode $I_{0}=5 \times 10^{-12} \; A$ and $T=300 \; K$, then:
$(a)$ What will be the forward current at a forward voltage of $0.6 \; V$?
$(b)$ What will be the increase in the current if the voltage across the diode is increased to $0.7 \; V$?
$(c)$ What is the dynamic resistance?
$(d)$ What will be the current if reverse bias voltage changes from $1 \; V$ to $2 \; V$?

The $V-I$ characteristic of a silicon diode is shown in the Figure. Calculate the resistance of the diode at $(a) \; I_{D} = 15 \, mA$ and $(b) \; V_{D} = -10 \, V$.

In a reverse-biased $pn$-junction diode,the depletion layer width: