Barrier potential of a $p-n$ junction diode does not depend on:

The forward biased diode connection is:

In a forward bias arrangement of a $p-n$ junction diode,the

In a semiconductor $p-n$ diode,the doping concentrations on $p$-side and $n$-side are $10^{15} \text{ atoms/cm}^3$ and $10^{18} \text{ atoms/cm}^3$,respectively. Which one of the following statements is true?

Consider the following statements $A$ and $B$ and identify the correct choice from the given answers:
$A:$ The width of the depletion layer in a $P-N$ junction diode increases in forward bias.
$B:$ In an intrinsic semiconductor,the Fermi energy level is exactly in the middle of the forbidden gap.

If the $p-n$ junction diode is unbiased,