The forward biased diode connection is:

$A$ $P-N$ junction is formed using $Si$ material. What is the approximate height of the depletion barrier in $V$?

The given circuit has two ideal diodes $D_1$ and $D_2$ connected as shown in the figure. The current flowing through the resistance $R_1$ will be (in $\,A$)

In the given figure,a $Si$ diode and a $Ge$ diode are connected in series. What should be the potential at point $A$ to bring both diodes into forward bias?

The cut-off voltage of the diodes (shown in figure) in forward bias is $0.6 \,V$. The current through the resistor of $40 \,\Omega$ is ........... $mA$.

In a $p-n$ junction,an electric field of $5 \times 10^5 \ V/m$ exists in the depletion region. The minimum kinetic energy of a conduction electron,in order to diffuse from $n$-side to the $p$-side,is found to be $3.2 \times 10^{-20} \ J$. The width of the depletion region is,