$A$ photodetector is made from a semiconductor $In_{0.53}Ga_{0.47}As$ with $E_g = 0.73 \, eV$. What is the maximum wavelength,which it can detect in $nm$?

$A$ $p-n$ junction photodiode is fabricated from a semiconductor with a band gap of $2.5 eV$. It can detect a signal of wavelength: (Given: Planck's constant $h = 6.6 \times 10^{-34} Js$,speed of light $c = 3 \times 10^8 m/s$,elementary charge $e = 1.6 \times 10^{-19} C$)

The $I-V$ characteristics of an $LED$ are correctly shown by which graph?

$A$ solar cell is to be fabricated for efficient conversion of solar radiation to emf using material $A$. The solar cell is to be mechanically protected with the help of a coating using material $B$. If the band gap energy of materials $A$ and $B$ are $E_{A}$ and $E_{B}$ respectively,then which of the following choices is optimum for better performance of the solar cell?

$A$ $CCD$ camera is fabricated using a semiconducting material having a band gap of $3 \ eV$. The wavelength of light it can detect is nearly (in $nm$)

$A$ light emitting diode $(LED)$ is fabricated using $GaAs$ semiconducting material whose band gap is $1.42 \,eV$. The wavelength of light emitted from the $LED$ is: (in $\,nm$)