Suppose the thickness of the depletion layer in a $P-N$ junction is $10^{-6} \ m$ and the value of the depletion barrier is $0.1 \ V$. Then the electric field is ....... $V \ m^{-1}$.

  • A
    $10^7$
  • B
    $10^{-6}$
  • C
    $10^5$
  • D
    $10^{-5}$

Explore More

Similar Questions

The circuit shown below contains two ideal diodes,each with a forward resistance of $50\,\Omega $. If the battery voltage is $6\,V$,the current through the $100\,\Omega $ resistance (in Amperes) is

For a $p-n$ junction,the intensity of the electric field is $1 \times 10^{6} \text{ V/m}$ and the width of the depletion region is $5000 \text{ Å}$. The value of the potential barrier is $\dots \text{ V}$.

The $I-V$ characteristics of a $p-n$ junction diode in forward bias is shown in the figure. The ratio of dynamic resistance,corresponding to forward bias voltages of $2 \; V$ and $4 \; V$ respectively,is

For the circuit shown in the figure,$V_{AB} = $ ....... $V$.

In the given figure,the potential difference between $A$ and $B$ is :-............. $V$

Difficult
View Solution

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo