Which of the following statements is incorrect?
- AAdding trivalent impurity to pure $Si$ creates a $P$-type semiconductor.
- BIn an $N$-type semiconductor,the majority charge carriers are holes.
- CIn a $P$-type semiconductor,the minority charge carriers are electrons.
- DThe resistance of an intrinsic semiconductor decreases with an increase in temperature.
Explore More
Similar Questions
$A$ silicon specimen is made into a $P$-type semiconductor by doping,on an average,one Indium atom per $5 \times 10^7$ silicon atoms. If the number density of atoms in the silicon specimen is $5 \times 10^{28} \text{ atoms}/m^3$,then the number of acceptor atoms in silicon per cubic centimetre will be:
Medium
View SolutionThe semiconductors are generally
Easy
View SolutionThe number of silicon atoms per $m^3$ is $5 \times 10^{28}$. This is doped with $4.5 \times 10^{21}$ atoms $/ m^3$ of Arsenic. The ratio of the number of electrons to the number of holes after doping is (Take $n_i = 1.5 \times 10^{16} / m^3$)
DifficultTS EAMCET 2022
View SolutionWhen the conductivity of a semiconductor is only due to the breaking of covalent bonds,the semiconductor is called:
Medium
View SolutionIn an extrinsic semiconductor,the number densities of holes and electrons are ${N_p}$ and ${N_e}$ respectively. Then:
Easy
View SolutionVedclass Products
For Students
Vedclass Test Series
Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.
Start Free TrialFor Teachers
Exam Paper Generator
Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.
Try FreeFor Institutes
Online Exam Module
Live online exams with unlimited students, 360° analytics & white-label branding.
See Demo