$A$ silicon specimen is made into a $P$-type semiconductor by doping,on an average,one Indium atom per $5 \times 10^7$ silicon atoms. If the number density of atoms in the silicon specimen is $5 \times 10^{28} \text{ atoms}/m^3$,then the number of acceptor atoms in silicon per cubic centimetre will be:

  • A
    $2.5 \times 10^{30} \text{ atoms}/cm^3$
  • B
    $1.0 \times 10^{13} \text{ atoms}/cm^3$
  • C
    $1.0 \times 10^{15} \text{ atoms}/cm^3$
  • D
    $2.5 \times 10^{36} \text{ atoms}/cm^3$

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At a temperature of $500 \ K$,the intrinsic electron number density $(n_e)$ and hole number density $(n_h)$ in a pure semiconductor are equal to $1.5 \times 10^{16} \ m^{-3}$. Now,by adding indium impurity,the hole density $(n_h)$ increases to $4.5 \times 10^{22} \ m^{-3}$. This doped semiconductor is:

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