$P-N$ junction is said to be forward biased,when

  • A
    the positive pole of the battery is joined to the $p$-semiconductor and negative pole to the $n$-semiconductor
  • B
    the positive pole of the battery is joined to the $n$-semiconductor and negative pole to the $p$-semiconductor
  • C
    the positive pole of the battery is connected to $n$-semiconductor and $p$-semiconductor
  • D
    a mechanical force is applied in the forward direction.

Explore More

Similar Questions

The cause of the potential barrier in a $p-n$ junction diode is

In a $p-n$ junction diode not connected to any circuit:

$A$ semiconductor $(Ge - As)$ has an energy gap of $1.43\, eV.$ What is the maximum wavelength emitted when a hole and an electron recombine in such semiconductor in $\mathring{A}$?

Difficult
View Solution

The approximate ratio of resistances in the forward and reverse bias of the $PN$-junction diode is

Application of a forward bias to a $P-N$ junction

Vedclass Products

For Students

Vedclass Test Series

Mock tests in real JEE/NEET style with performance analysis. 5-day free trial.

Start Free Trial
For Teachers

Exam Paper Generator

Generate Set A/B/C/D exam papers from 7.5L+ questions in 2 minutes. 3 chapters free.

Try Free
For Institutes

Online Exam Module

Live online exams with unlimited students, 360° analytics & white-label branding.

See Demo