The approximate ratio of resistances in the forward and reverse bias of the $PN$-junction diode is

In the given circuit,the current flowing through the ideal $P-N$ junction diode is .......$mA$.

$A$ $2 \ V$ cell is connected across points $A$ and $B$ as shown in the figure. Assume that the resistance of each diode is zero in forward bias and infinity in reverse bias. The current supplied by the cell is (in $A$)

In a forward bias arrangement of a $p-n$ junction diode,the

In a semiconductor $p-n$ diode,the doping concentrations on $p$-side and $n$-side are $10^{15} \text{ atoms/cm}^3$ and $10^{18} \text{ atoms/cm}^3$,respectively. Which one of the following statements is true?

Explain the barrier potential and depletion region in a $p-n$ junction diode.