$A$ diode is connected in parallel with a resistance $R$ as shown in the figure. The most probable current $(I)$ - voltage $(V)$ characteristic is:

If the forward voltage in a semiconductor diode is doubled,the width of the depletion layer will

For a $p-n$ junction,the intensity of the electric field is $1 \times 10^{6} \text{ V/m}$ and the width of the depletion region is $5000 \text{ Å}$. The value of the potential barrier is $\dots \text{ V}$.

$A$ $p-n$ junction diode is connected to a battery of $emf$ $5.5\, V$ and external resistance $5.1\, k\Omega$. The barrier potential in the diode is $0.4\, V$. The current in the circuit is

In a $p-n$ junction diode, the current $I$ can be expressed as $I=I_{0} \left[\exp \left(\frac{e V}{k_{B} T}\right)-1\right]$, where $I_{0}$ is the reverse saturation current, $V$ is the voltage across the diode (positive for forward bias, negative for reverse bias), $I$ is the current through the diode, $k_{B}$ is the Boltzmann constant $(8.6 \times 10^{-5} \; eV/K)$, and $T$ is the absolute temperature. If for a given diode $I_{0}=5 \times 10^{-12} \; A$ and $T=300 \; K$, then:
$(a)$ What will be the forward current at a forward voltage of $0.6 \; V$?
$(b)$ What will be the increase in the current if the voltage across the diode is increased to $0.7 \; V$?
$(c)$ What is the dynamic resistance?
$(d)$ What will be the current if reverse bias voltage changes from $1 \; V$ to $2 \; V$?

When a $P-N$ junction is forward biased,which of the following is true?