When a P-N junction is forward biased,which o | vedclass

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(D) In a $P-N$ junction,forward biasing occurs when the positive terminal of the external battery is connected to the $P$-type semiconductor and the n

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The positive terminal of the battery is connected to the $P$-region of the junction,and the depletion region is thin.

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(D) In a $P-N$ junction,forward biasing occurs when the positive terminal of the external battery is connected to the $P$-type semiconductor and the negative terminal is connected to the $N$-type semiconductor.In this configuration,the holes in the $P$-region are pushed towards the junction,and the electrons in the $N$-region are pushed towards the junction.This action reduces the width of the depletion layer and lowers the potential barrier,allowing current to flow easily across the junction.Therefore,the positive terminal is connected to the $P$-region,and the depletion region becomes thin.

When a $P-N$ junction is forward biased,which of the following is true?

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