The ratio $(R)$ of output resistance $r_0$ and input resistance $r_i$ in measurements of input and output characteristics of a transistor is typically in the range:

In an $n-p-n$ transistor,in $CE$ configuration:

The dc common emitter current gain of an $n-p-n$ transistor is $50$. The potential difference applied across the collector and emitter of a transistor used in $CE$ configuration is $V_{CE} = 2 \ V$. If the collector resistance $R_{C} = 4 \ k\Omega$,the base current $(I_{B})$ and the collector current $(I_{C})$ are:

In an $n-p-n$ transistor amplifier,the collector current is $8 \ mA$. If $80 \%$ of the electrons from the emitter reach the collector,then ($\alpha$ and $\beta$ are current ratios):

$A$ $N-P-N$ transistor is connected in common emitter configuration (see figure) in which the collector voltage drop across the load resistance $(800 \; \Omega)$ connected to the collector circuit is $0.8 \; V$. The collector current is .............. $mA$.

In a common emitter $(CE)$ amplifier having a voltage gain $G$,the transistor used has a transconductance of $0.03\,mho$ and a current gain of $25$. If the above transistor is replaced with another one with a transconductance of $0.02\,mho$ and a current gain of $20$,the new voltage gain will be: