The potential barrier in the depletion layer | vedclass

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(A) In a $P-N$ junction,when $P$-type and $N$-type semiconductors are joined,electrons diffuse from the $N$-side to the $P$-side,and holes diffuse fro

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Ions

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(A) In a $P-N$ junction,when $P$-type and $N$-type semiconductors are joined,electrons diffuse from the $N$-side to the $P$-side,and holes diffuse from the $P$-side to the $N$-side.This diffusion leaves behind immobile ionized donor atoms on the $N$-side (positive ions) and immobile ionized acceptor atoms on the $P$-side (negative ions).These immobile ions create an electric field across the junction,which acts as a potential barrier.Therefore,the potential barrier in the depletion layer is due to the presence of these fixed ions.

The potential barrier in the depletion layer is due to

Similar Questions

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