The output characteristics of an $n-p-n$ transistor represent,($I_C =$ collector current,$V_{CE} =$ potential difference between collector and emitter,$I_B =$ base current,$V_{BB} =$ voltage given to base,$V_{BE} =$ the potential difference between base and emitter)

  • A
    changes in $I_C$ as $I_B$ and $V_{BB}$ are changed
  • B
    changes in $I_C$ with changes in $V_{CE}$ ($I_B =$ constant)
  • C
    changes in $I_B$ with changes in $V_{CE}$
  • D
    change in $I_C$ as $V_{BE}$ is changed

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In a transistor,if $\frac{I_C}{I_E} = \alpha$ and $\frac{I_C}{I_B} = \beta$. If $\alpha$ varies between $\frac{20}{21}$ and $\frac{100}{101}$,then the value of $\beta$ lies between:

In an $n-p-n$ transistor,in $CE$ configuration:

In an $NPN$ transistor,$10^{8}$ electrons enter the emitter in $10^{-8} \ s$. If $1\%$ of electrons are lost in the base,the fraction of current that enters the collector and the current amplification factor are respectively:

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When the transistor is used as an amplifier,

$Assertion$ : In common base configuration, the current gain of the transistor is less than unity.
$Reason$ : The collector terminal is reverse biased for amplification.

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