In an $NPN$ transistor,$10^{8}$ electrons enter the emitter in $10^{-8} \ s$. If $1\%$ of electrons are lost in the base,the fraction of current that enters the collector and the current amplification factor are respectively:

Given below are two statements:
Statement $I:$ In a typical transistor,all three regions emitter,base and collector have same doping level.
Statement $II:$ In a transistor,collector is the thickest and base is the thinnest segment.
In the light of the above statements,choose the most appropriate answer from the options given below.

In an $NPN$ transistor,the collector current is $20 \, mA$. If $90\%$ of the electrons emitted reach the collector,then:

The typical transfer characteristic of a transistor in $CE$ configuration is shown in the figure. $A$ load resistor of $2\,k\Omega$ is connected in the collector branch of the circuit used. The input resistance of the transistor is $0.50\,k\Omega$. The voltage gain of the transistor is:

In an $n-p-n$ common emitter $(CE)$ transistor,the collector current changes from $5\,mA$ to $16\,mA$ for a change in base current from $100\,\mu A$ to $200\,\mu A$,respectively. The current gain of the transistor is:

In the circuit shown,the value of $\beta$ of the transistor is $48$. If the base current supplied is $200 \mu A$,what is the voltage at the terminal $Y$ (in $V$)?