The cut-in voltage for a silicon diode is approximately $V$.

The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon $P-N$ junctions are

Currents flowing in each of the following circuits $A$ and $B$ respectively are

The $I-V$ characteristics of a semiconductor diode are shown in the figure. The resistance of the diode at $V = -8 \text{ V}$ and $I_{d} = 10 \text{ mA}$ are respectively:

In a $p-n$ junction diode,change in temperature due to heating

In forward bias,the width of the potential barrier in a $P-N$ junction diode: