The $\text{I-V}$ characteristic of a $\text{P-N}$ junction in forward bias is shown. The approximate forward resistance of the junction is $-$ (in $Omega$)

  • A
    $1$
  • B
    $0.25$
  • C
    $0.5$
  • D
    $5$

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$A$. When the forward bias voltage across a $p-n$ junction diode increases above a certain threshold voltage,the diode current increases significantly.
$B$. This current is called reverse saturation current.
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